Reduced radial resistivity variation of FZ Si wafers with Advanced NTD

Anders Lei, Martin Græsvænge, Christian Hindrichsen

Journal of Crystal Growth（2019）

引用 1|浏览7

暂无评分

摘要

•Novel new silicon doping method: Advanced neutron transmutation doping.•Combining gas phase doped float zone silicon with neutron transmutation doping.•Record low wafer resistivity variation of 2% for 200 mm float zone wafers.•100% of wafers from one ingot within 2% resistivity variation.

查看译文

关键词

A2. Floating zone technique,A1. Neutron transmutation doping,A1. Resistivity variation,B3. Power electronics

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要