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Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications Embedding 16MB Phase Change Memory

F. Arnaud,P. Zuliani,J. P. Reynard,A. Gandolfo,F. Disegni,P. Mattavelli,E. Gomiero,G. Samanni,C. Jahan,R. Berthelon,O. Weber,E. Richard,V. Barral,A. Villaret,S. Kohler,J. C. Grenier,R. Ranica,C. Gallon,A. Souhaite,D. Ristoiu,L. Favennec,V. Caubet,S. Delmedico,N. Cherault,R. Beneyton,S. Chouteau,P. O. Sassoulas, A. Vernhet,Y. Le Friec,F. Domengie,L. Scotti, D. Pacelli,J. L. Ogier, F. Boucard,S. Lagrasta,D. Benoit,L. Clement,P. Boivin,P. Ferreira,R. Annunziata,P. Cappelletti

International Electron Devices Meeting（2018）

Cited 72|Views57
Key words
automotive microcontroller applications,chalcogenide ternary material,body biasing capability,triple gate oxide integration,high-k metal gate stack,code storage memory,phase change memory,fully depleted silicon on insulator,FDSOI transistors,fully integrated macrocell,FDSOI e-NVM solution,HKMG stack,bit error rate,BER,current distributions,temperature 150.0 degC,size 28.0 nm,voltage 5.0 V
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