Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness

J. Jourdon,S. Lhostis,S. Moreau, J. Chossat, M. Arnoux, C. Sart, Y. Henrion, P. Lamontagne,L. Arnaud,N. Bresson,V. Balan, C. Euvrard, Y. Exbrayat, D. Scevola, E. Deloffre, S. Mermoz, A. Martin, H. Bilgen, F. Andre, C. Charles, D. Bouchu,A. Farcy,S. Guillaumet,A. Jouve,H. Fremont,S. Cheramy

2018 IEEE International Electron Devices Meeting (IEDM)（2018）

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摘要

Hybrid bonding is a high-density technology for 3D integration but further interconnect scaling down could jeopardize electrical and reliability performance. A study of the influence of hybrid bonding pitch shrinkage on a 3D stacked backside illuminated CMOS image sensor was performed from a process, device performance and robustness perspectives, from 8.8 μm down to 1.44 μm bonding pitches. As a result no defect related to smaller bonding pads was evidenced neither by thermal cycling nor by electromigration, thus validating fine-pitch hybrid bonding robustness and introduction for next generation image sensors.

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关键词

3D stacked image sensors,pitch shrinkage,interconnect robustness,high-density technology,interconnect scaling,reliability performance,device performance,robustness perspectives,fine-pitch hybrid bonding robustness,backside illuminated CMOS image sensor,bonding pads,next generation image sensors,size 8.8 mum,size 1.44 mum

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