Atomic insight into concurrent He, D, and T sputtering and near-surface implantation of 3C-SiC crystallographic surfaces

•Newly developed interatomic potential to treat He and H interactions with 3C-SiC.•Si and C physical sputtering yields from 3C-SiC are significantly different.•Crystallographic orientation and temperature show limited influence on sputtering yields.•He, D, and T implantation profiles and retention depend on crystallographic orientation.