A Study Of Field Effect On In-Plane Graphene Structure For Rf Application

In this novel work, we present the experimental result of electric field distribution of in-plane graphene structure by investigating the IV-CV measurements at room temperature. In this work, we also studied the Raman spectroscopy at 532nm and correlative analysis of energy selective backscattered electrons mapping taken by ESB detector and the secondary electrons image acquired by the In-Lens detector at different energy level to confirm the graphene layer present on specific location and the layer thickness. The experimental results shows that the capacitance coupling between two electrode is 450 fFmm1 at 0.18V potential difference. Contact resistance and resistivity have been measured are similar to 220 W-mu m and a resistivity similar to 1.8 x 10(-4) Omega-cm(-2). Extrapolated parasitic resistance and capacitance measured from transfer length method are similar to 200W-mu m and 445fFmm(-1). These results are promising for high linearity graphene devices in radiofrequency application.