Epitaxial phases of high Bi content GaSbBi alloys.

Joonas Hilska,Eero Koivusalo,Janne Puustinen,Soile Suomalainen,Mircea Guina

Journal of Crystal Growth（2019）

引用 6|浏览37

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摘要

•Epitaxy of high Bi content GaSbBi alloys investigated by combinatorial MBE.•Epitaxial phases with distinct structural and Bi incorporation characteristics established.•Phases are mapped by Sb/Ga ratio and growth temperature over broad parameter space.•Phase with optimal structural quality is suppressed by increase of Bi/Ga ratio.

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关键词

A3. Molecular beam epitaxy,B1. Antimonides,B1. Bismuth compounds,B2. Semiconducting III-V materials,B2. Semiconducting ternary compounds

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