Design and Fabrication of 1.2kV/40m Ω 4H-SiC MOSFET

Runhua Huang,Hao Liu,Tao Liu,Tongtong Yang,Song Bai,Ao Liu,Yun Li,Zhifei Zhao

2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)（2018）

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摘要

A 4H-SiC MOSFET with breakdown voltage higher than 1200V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of DMOSFET. The n-type epilayer is 10 μm thick with a doping of 1×10 ¹⁶ cm ^-3 . The devices were fabricated with a floating guard ring edge termination. The drain current I _d = 20 A at V _g = 20 V, corresponding to V _d ≤ 1.6 V.

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关键词

floating guard ring edge termination,n-type epilayer,breakdown voltage,4H-SiC MOSFET,voltage 20.0 V,voltage 1.6 V,voltage 1.2 kV,voltage 1200.0 V,size 10.0 mum,current 20.0 A

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