InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

T. Cerba, P. Hauchecorne,M. Martin,J. Moeyaert, R. Alcotte,B. Salem,E. Eustache, P. Bezard,X. Chevalier, G. Lombard,F. Bassani,S. David,G. Beainy,E. Tournié,G. Patriarche, H. Boutry,M. Bawedin,T. Baron

Journal of Crystal Growth（2019）

引用 3|浏览64

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摘要

•InSb-like interfacial layer at GaSb/InAs interface.•Densely packed and low-dimensions InAs fins.•Block copolymer assisted lithography for low device dimensions.•GaAs islands forming at GaSb/Si interface with TBAs pre-treatment.

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关键词

A3 Organometallic vapor phase epitaxy,B2 Semiconducting III–V materials,B3 High electron mobility transistors,B3 Field effect transistors,A1 Etching

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