A High Linearity Wideband Lna With An Excellent Gain Flatness For S-Band Application

PROCEEDINGS OF 2018 IEEE 3RD ADVANCED INFORMATION TECHNOLOGY, ELECTRONIC AND AUTOMATION CONTROL CONFERENCE (IAEAC 2018)(2018)

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摘要
In this paper, a wideband low noise amplifier (LNA) of bandwidth 2-4 GHz, gain more than 31 dB, flatness fluctuating in 0.44 dB and maximum noise figure less than 2.2 dB is proposed. The LNA is in a two-stage cascade structure and the same bias voltage conditions is used by each stage. The impedance matching is adjusted by the capacitive feedback at low frequency and the resistance feedback at high frequency. Thus the wide-band matching and flat gain is realized. The output power at 1 dB compression point is more than 14.8 dBm and a compact chip area is 2mmx1.58mm including RF pad. The LNA features broad bandwidth, relatively high gain, low noise figure and an excellent gain flatness, and will be further used in S-band application.
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关键词
low noise amplifier(LNA), gain flatness, S-band, GaAs, pseudomorphic high electron mobility transistor(pHEMT)
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