Analysis of Press-Pack SiC MOEFET’S Parasitic Resistance

To press-pack devices, higher packaging resistance results in higher conduction losses. In this paper, compositions of the packing resistance are studied for a press-pack SiC MOSFET. Firstly an estimation method of body resistance of conducting layers in the press-pack SiC MOSFET with ANSYS Q3D is investigated, which is verified by the experiment. Since the Q3D resistance estimation method is unable to obtain contact resistances between different layers in the press-pack, the contact resistances estimation method is proposed. Finally all resistances in the press-pack are obtained. It is concluded that the contact resistance is critical to the static loss of the press-pack. It is useful to the press-pack structure improvement in the future.