Improvement of Conversion Loss of Resistive Mixers Using Bernal-Stacked Bilayer Graphene

Mengchuan Tian,Xuefei Li,Qingguo Gao,Xiong Xiong,Zhenfeng Zhang,Yanqing Wu

IEEE Electron Device Letters（2019）

引用 6|浏览83

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摘要

In this letter, we present dual-gate Bernal-stacked bilayer graphene FETs which are used for gate-pumped resistive mixers. The results show that the conversion loss improves when the device on/off ratio increases. At 2 GHz, a record conversion loss of 12.7 dB has been obtained from 0.16 μm device among graphene resistive mixers. Furthermore, more than 10 dB change of conversion loss has been obtai...

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关键词

Mixers,Graphene,Logic gates,Resistance,Field effect transistors,Two dimensional displays,Dielectrics

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