Experimental observation of zero DIBL in short-channel hysteresis-free ferroelectric-gated FinFET
Solid-State Electronics(2019)
摘要
•Hysteresis-free & steep-switching ferroelectric-gated FinFET.•Negative DIBL effect in the ferroelectric-gated FinFET.•Zero DIBL is experimentally observed in the FinFET.
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关键词
Short-channel transistor,Negative capacitance,Drain-induced-barrier-lowering,Ferroelectric material
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