C-V Measurement under Different Frequencies and Pulse-mode Voltage Stress to Reveal Shallow and Deep Trap Effects of GaN HEMTs
2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)(2018)
摘要
In this work, the influence of interface traps at the Si
3
N
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/ (GaN) / AlGaN interface and carbon-related buffer traps on AlGaN/GaN-on-silicon high electron mobility transistors (HEMTs) has been studied using high-frequency capacitance-voltage (HFCV) and quasi-static C- V (QSCV) measurement. The correlation between Ron degradation and two different traps distributions subjected to different operation conditions have been investigated. Deep-level traps from the hole-emission process of carbon-related buffer have been activated by high drain voltage under off-state in pulse-mode condition and shallow-level traps from interface states are observed with an increase in gate voltage under on-state.
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关键词
GaN HEMTs,Traps,C-V measurement,Pulse-mode Stress
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