Radiation Response of AlGaN-Channel HEMTs
IEEE Transactions on Nuclear Science(2019)
摘要
We present heavy ion and proton data on AlGaN high-voltage HEMTs showing single event burnout (SEB), total ionizing dose, and displacement damage responses. These are the first such data for materials of this type. Two different designs of the epitaxial structure were tested for SEB. The default layout design showed burnout voltages that decreased rapidly with increasing LET, falling to about 25% ...
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关键词
5G mobile communication,Ions,Protons,HEMTs,MODFETs,Logic gates,Testing
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