Vertical GaN Schottky Diodes Grown on Highly Conductive Ammono-GaN Substrate

We report on vertical n-GaN high voltage Schottky diodes grown by metal organic chemical vapour deposition and hydride vapour phase epitaxy on conductive ammono-GaN substrate. The thermionic emission current model has been applied for diodes analysis and parameters extraction. Finally, we demonstrate that breakdown voltage as high as 670 V for such structures can be achieved.