Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN

P.V. Wadekar,C.W. Chang, Y.J. Zheng,S.S. Guo,W.C. Hsieh,C.M. Cheng,M.H. Ma,W.C. Lai,J.K. Sheu,Q.Y. Chen,L.W. Tu

Applied Surface Science（2019）

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摘要

•Valence state of Mn in GaN can becontrolled by the amount of doping.•Low doping leads to Mn + 3 with room temperature ferromagnetism.•High doping leads to formation of clustering and second phase formation with Mn in +2 and +0.

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