Developed Quasi Z-Source Inverter Based On Diode-Cells: Analysis And Simulation

In this paper, the developed quasi Z-source inverter (QZSI) based on new diode-cell is proposed. This topology consists of n numbers of the proposed diode-cell. The proposed inverter is completely analyzed in three states: two-cell QZSI, three-cell QZSI and n-cell QZSI. In addition, the equations of the capacitors voltage stress, diodes voltage stress, boost factor, dc-link current, inductors current and diodes current are calculated. The ability of obtaining a desired value of the boost factor without using any additional active elements is the main advantage of this inverter. Moreover, decreasing the value of inductors current, diodes current and dc-link current by increasing the number of used diode-cells are the other advantages of the proposed Z-source inverter. Finally, the correct issues of the presented analyses are reconfirmed by using the simulation results in EMTDC/PSCAD software.