Analysis Of Junction Recombination Of P-Type Single Crystalline Silicon Solar Modules Affected By Potential Induced Degradation Under Non-Stc

Irradiance-dependent current-voltage (I-V) measurements have been used to study the junction recombination mechanisms in solar modules affected by potential induced degradation (PID). In this study, the double-diode-model was used to describe the PID-affected module's performance at low illuminations. The experimental results showed that PID strongly influenced the depletion region recombination behavior (J(02)) and ideality factor n(2). The J(02) and n(2) grow rapidly with the light intensity decreasing. However, J(01) is almost unaffected by PID and grows slightly with the light intensity decreasing. The result shows that the effect of PID on the junction recombination is more severe under weak light intensity.