Statistical Variability Simulation Of Novel Capacitor-Less Z2fet Dram: From Transistor To Circuit
2018 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2018)（2018）
Key words
circuit level read performance,metal gate granularity,statistical variability simulation,capacitor-less Z2FET DRAM,random discrete dopant induced variations,fabrication process,external capacitor,Z2FET-based volatile memory product development,Z2FET-based memory cell,process optimization,Gated-SOI region,DRAM Memory Window
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined