Detailed Modeling Recombination In Pid-Affected N-Type Monocrystalline Silicon Solar Module

In this paper, the double-diode equivalent model of solar cell is used to analyze the recombination occurring in p-type mono-crystalline silicon solar module affected by potentialinduced degradation (PID). By comparison with the measured data and EL images, it reveals that more recombination current (I-d2) is generated in solar module undergoing PID stress. The variation of I-d2/I-d1 shows that recombination current plays a main role in output current of solar module under low voltage. What's worse, the value of I-d2/I-d1 becomes larger after PID stress. These results indicate that the p-n junction may be destroyed by PID.