Large Area Nanostructure Integration For Broad-Spectrum, Omnidirectional Antireflection Improvements On Polymer Packaged, Mechanically Flexible, Epitaxial Lift-Off Iii-V Solar Arrays

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)(2018)

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摘要
We demonstrate the integration of subwavelength moth-eye antireflection nanostructures onto a fully packaged commercial eight cell array of dual junction epitaxial lift-off GaAs solar cells. A low cost, scalable, and large area nanosphere lithography patterning process was used to fabricate the nanostructures on a polymer PET packaging layer. The mechanically flexible array shows 29.80% PCE at normal incidence and enhanced J(sc) at large angles of incidence due to the anti-reflection nanostructures.
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subwavelength moth-eye antireflection nanostructures,fully packaged commercial eight cell array,polymer PET packaging layer,mechanically flexible III-V solar arrays,large area nanostructure integration,omnidirectional antireflection improvement,broad-spectrum antireflection improvement,polymer packaged III-V solar arrays,epitaxial lift-off III-V solar arrays,dual junction epitaxial lift-off gallium arsenide solar cells,large area nanosphere lithography patterning process,efficiency 29.80 percent,GaAs
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