Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

Filip Dominec,Alice Hospodková,Tomáš Hubáček,Markéta Zíková,Jiří Pangrác,Karla Kuldová,Aliaksei Vetushka,Eduard Hulicius

Journal of Crystal Growth（2019）

引用 6|浏览18

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摘要

•Presence of In in buffer layer is not necessary for PL improvement.•Thicker low temperature buffer layer slightly improves luminescence intensity.•N2 carrier gas in comparison with H2 increases V-pit size and luminescence intensity.•Increased V-pit size by buffer layer was found to be the reason of MQW PL enhancement.•Zn was determined as important contaminant in InGaN/GaN MQW region.

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关键词

A1. Low dimensional structures,A1. V-pits,A3. Metalorganic vapor phase epitaxy,B2. InGaN/GaN quantum wells,B2. GaN buffer layer,B3. Scintillators

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