A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels
IEEE Transactions on Electron Devices(2019)
摘要
This paper presents a unified physical formulation for the avalanche effect in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) at different injection levels. Based on an analytical description of the resulting electric-field distribution, a closed-form analytical expression for the multiplication factor is derived and has been implemented in the HICUM compact model. The model accu...
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关键词
Silicon germanium,Doping,Impact ionization,Silicon,Heterojunction bipolar transistors,Semiconductor process modeling
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