Controlled Synthesis Of Ingan Quantum Dots For Efficient Light Emitters

Xiongliang Wei,Syed Ahmed Al Muyeed,Matthew Peart,Nelson Tansu,Jonathan J. Wierer

2018 IEEE PHOTONICS CONFERENCE (IPC)（2018）

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摘要

InGaN quantum dots formed by quantum-size controlled photoelectrochemical etching are demonstrated. The QDs are capped with AlGaN/GaN passivation layers to reduce surface recombination These QDs are small-sized, <10 nm in diameter, and emit at similar to 412 nm with a narrow FWHM of 8 nm at 77 K.

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关键词

efficient light emitters,quantum-size controlled photoelectrochemical etching,indium gallium nitride quantum dots,aluminum gallium nitride-gallium nitride passivation layers,surface recombination,small nanometer size,size 8.0 nm,temperature 77.0 K,InGaN-AlGaN-GaN

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