22-Nm Fd-Soi Embedded Mram With Full Solder Reflow Compatibility And Enhanced Magnetic Immunity

K. Lee,K. Yamane,S. Noh,V. B. Naik,H. Yang,S. H. Jang,J. Kwon,B. Behin-Aein,R. Chao,J. H. Lim, K. W. Gan,D. Zeng,N. Thiyagarajah, L. C. Goh,B. Liu, E. H. Toh, B. Jung, T. L. Wee,T. Ling,T. H. Chan, N. L. Chung, J. W. Ting, S. Lakshmipathi, J. S. Son,J. Hwang,L. Zhang,R. Low,R. Krishnan, T. Kitamura, Y. S. You,C. S. Seet,H. Cong,D. Shum,J. Wong, S. T. Woo,J. Lam, E. Quek,A. See,S. Y. Siah

2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY（2018）

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摘要

We demonstrate a fully functional embedded MRAM (eMRAM) macro integrated into a 22-nm FD-SOI CMOS platform. This macro combined with eFlash-flavor MTJ film stacks shows median-die bit error rate (BER) <1 ppm after 5x solder reflows. It also meets the automotive grade-1 data retention requirement and shows intrinsic stand-by magnetic immunity of 1.4 kOe (BER criteria = 1 ppm) after 1-hr exposure at 25 degrees C. The results reveal that eMRAM is capable of serving a broad spectrum of eFlash applications at 22 nm or beyond.

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关键词

intrinsic stand-by magnetic immunity,FD-SOI CMOS platform,FD-SOI embedded MRAM,median-die bit error rate,solder reflows,BER criteria,automotive grade-1 data retention requirement,eFlash-flavor MTJ film stacks,eMRAM,fully functional embedded MRAM macro,enhanced magnetic immunity,full solder reflow compatibility,temperature 25.0 degC,size 22.0 nm,time 1 hr,Si

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