Design and Optimization of ESD P-Direction Diode in Bulk FinFET Technology

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)（2018）

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摘要

We present an ESD P-direction STI diode fabricated in an advanced bulk FinFET technology. The impact on process and design parameters are evaluated in detail. With design optimization, the ESD P-direction STI diode achieves 46% and 16% performance improvement for It2/C and It2/Area relative to the C-direction design.

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关键词

ESD P-direction diode,design parameters,design optimization,STI diode,bulk FinFET technology,C

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