Device Failure from the Initial Current Step of a CDM Discharge

David Johnsson,Krzysztof Domanski,Harald Gossner

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)（2018）

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摘要

CDM discharges exhibit a fast initial current step when the stray capacitance of the pogo pin is charged. It is demonstrated that the high slew rate can damage sensitive gate oxides. The miscorrelation of CDM and CC-TLP methodologies is addressed by applying pulses with 20 ps rise time.

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关键词

device failure,CDM discharge,stray capacitance,pogo pin,gate oxides,CC-TLP methodologies,initial current step,charged device model,capacitive coupled transmission line pulsing,low-noise amplifier,time 20.0 ps

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