Analysis of forward recovery in GGNMOS devices under fast transients

Gabriel-Dumitru Cretu,Filippo Magrini,Friedrich zur Nieden,Kai Esmark,Stefan Decker

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)（2018）

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摘要

A GGNMOS device is presented as a vehicle to compare different methods of analyzing the device behavior under fast transient events (CDM, CCTLP, vf-TLP, TCAD mixed mode simulations). The slope developed as a key parameter for the failure mode. The necessity along with the advantages and disadvantages of these methods are discussed.

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关键词

GGNMOS device,fast transient events,TCAD mixed mode simulations,failure mode,forward recovery,fast transients

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