A Methodology To Improve Linearity Of Analog Rram For Neuromorphic Computing
2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY(2018)
摘要
The conductance tuning linearity is an important parameter of analog RRAM for neuromorphic computing. This work presents a novel methodology to improve the conductance tuning linearity of the filamentary RRAM. An electro-thermal modulation layer is designed and introduced to control the distribution of electric field and temperature in the filament region. For the first time, a HfOx based RRAM is demonstrated with linear analog SET, linear analog RESET, 50ns speed, 10x analog tuning window, 100k Omega on-state resistance, and high temperature retention for multilevel states. The excellent performances of the analog RRAM devices enable high accuracy online learning in a neural network.
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关键词
analog RRAM, synapse, online learning
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