Half-threshold Bias Ioff Reduction Down to Na Range of Thermally and Electrically Stable High-Performance Integrated OTS Selector, Obtained by Se Enrichment and N-doping of Thin GeSe Layers

Naga Sruti Avasarala,G. L. Donadio,T. Witters,K. Opsomer,B. Govoreanu,A. Fantini,S. Clima,H. Oh,S. Kundu,W. Devulder,M. H. van der Veen,J. Van Houdt,M. Heyns,L. Goux,G. S. Kar

2018 IEEE Symposium on VLSI Technology（2018）

引用 34|浏览66

关键词

leakage current,thermal stability,GeSe layers,N-doping,Se enrichment,electrically stable high-performance integrated OTS selector,electrical stability,integrated 50nm OTS devices,half threshold bias,temperature 600.0 degC,current 1.0 nA,size 50.0 nm,current 23.0 MA,GeSe:N

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要