Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139

The bipolar voltage comparator LM139 were exposed to ionizing radiation with a high-dose-rate of 10 rad(Si)/s and a low-dose-rate of 0.01 rad(Si)/s; then, pulsed laser single-event-transient (SET) testing was performed. The experimental results show that the SET phenomenon of LM139 after low-dose-rate irradiation of 0.01 rad(Si)/s is obviously different from the SET phenomenon of LM139 after high-dose-rate irradiation of 10 rad(Si)/s. After irradiation with the low-dose-rate, the comparator LM139 has Enhanced Low Dose Rate Sensitivity (ELDRS) in terms of the total dose effect, and the SET was further influenced by ELDRS. The greater gain degradation of the internal transistor in LM139 with low-dose-rate irradiation is the direct cause of this phenomenon.