Influence Of Quantum Well Barrier Height On Series Resistance In Gaas-Based Broad Area Diode Lasers

C. Frevert,S. Knigge, G. Erbert,F. Bugge,P. Crump

2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)（2018）

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摘要

High efficiency GaAs-based lasers must have low resistance. However, resistance diverges as temperature reduces, for symmetric and asymmetric vertical structures, at diverse wavelengths, contrary to expectation from bulk mobilities. Resistance increases with quantum well depth and is reduced for p-doped quantum wells.

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关键词

p-doped quantum wells,quantum well barrier height,series resistance,GaAs-based broad area diode lasers,asymmetric vertical structures,quantum well depth,symmetric vertical structures,bulk mobilities,GaAs

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