An In-Depth Study Of High-Performing Strained Germanium Nanowires Pfets

An in-depth study of scaled nanowire Ge pFETs for digital and analog applications is proposed. Improved device characteristics are first obtained after gaining a good understanding of the HPA on device performance. Up to 45% higher I-D,I-SAT is obtained at I-OFF=3nA/fin when comparing to best Si GAA nFET and similar ID, SAT is found when benchmarking to mature 14/16nm pFinFET technology at -0.5 V-DD. The temperature dependent study of I-D,I-SAT highlights that the mechanism limiting the transport in Ge at short channel are neither purely diffusive nor fully ballistic.