Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation

Chhandak Mukherjee,Christian Raya,Bertrand Ardouin,Marina Deng,Sebastien Fregonese,Thomas Zimmer,Virginie Nodjiadjim,Muriel Riet,Jean-Yves Dupuy,Mathieu Luisier,Wei Quan,Akshay Arabhavi,Colombo R. Bolognesi,Cristell Maneux

IEEE Transactions on Electron Devices（2018）

引用 17|浏览49

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摘要

We investigate the bias, temperature, and frequency dependence of two III-V double heterojunction bipolar transistors technologies based on InGaAs/InP and GaAsSb/InP processes, using a HiCuM/L2 compact model-based multigeometry scalable parameter extraction methodology. Very good agreement between the model simulations and experimental data is demonstrated. Transistor currents and junction capacit...

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关键词

Double heterojunction bipolar transistors,Geometry,Capacitance,Predictive models,Junctions,Semiconductor process modeling

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