Total Ionizing Dose Effects in 3-D NAND Flash Memories

Marta Bagatin,Simone Gerardin,Alessandro Paccagnella,Silvia Beltrami,Alessandra Costantino,Michele Muschitiello,Ali Zadeh,Veronique Ferlet-Cavrois

IEEE Transactions on Nuclear Science（2019）

引用 34|浏览58

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摘要

The effects of total ionizing dose on 3-D flash memories irradiated with gamma rays are investigated. The evolution and shape of threshold voltage distributions are studied versus dose for floating gate cell NAND arrays with vertical-channel architecture. The dependence of total dose effects on the logic level stored in the cells, the underlying mechanisms, and the raw bit errors induced by gamma-...

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关键词

Computer architecture,Microprocessors,Radiation effects,Three-dimensional displays,Nonvolatile memory,Flash memories,Threshold voltage

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