GaN/AlGaN Photovoltaic Quantum Well Infrared Photodetector at 2.3 μm

photonics society summer topical meeting series(2018)

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摘要
We present a novel GaN/AlGaN Photovoltaic Quantum Well Infrared Photodetector operating at room temperature with peak response at 2.3 μm. The peak responsivity, measured at front 45° illumination configuration at 110 K is 870μA/W at −1 V bias and 255 μA/W at zero bias.
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关键词
GaN, AlGaN, QWIP, SWIR, MIR, ISB Detectors
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