OFF-State Leakage and Performance Variations Associated With Germanium Preamorphization Implant in Silicon–Germanium Channel pFET

Parameter variations in the transistor characteristics with new materials and process steps pose an increasing challenge for CMOS scaling to nanometer feature size. Alternate channel materials such as silicon- germanium (SiGe) for p-type field effect transistor (pFET) at 32 nm and beyond are useful because of higher mobility and lower threshold voltage (VT) but suffer from higher gate-induced drai...