Photonic Integration With Epitaxial III–V on Silicon

IEEE Journal of Selected Topics in Quantum Electronics（2018）

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摘要

We present a brief overview of the various leading platforms for photonic integration. Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing epitaxially grown III-V material on silicon-without the need for wafer bonding, or an externally coupled laser. Finally, a techno-economic analysis contrasting the aforementioned platforms will be presented.

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关键词

Photonics,Silicon,III-V semiconductor materials,Indium phosphide,Epitaxial growth,Waveguide lasers,Phase modulation

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