High Performance Ultrathin SnO 2 Thin-Film Transistors by Sol–Gel Method

Sol-gel processed ultrathin nanostructured SnO2 thin-film transistors were successfully fabricated on a SiO2/Si substrate without using a self-aligned monolayer or high-k insulator, which may be unsuitable techniques for the commercial fabrication of complementary metal-oxide-semiconductors. The highest extracted field mobility was approximately 100 cm2/V·s. In addition, by controlling the SnO2 fi...