Epitaxial growth of solution derived (Ce 0.8 Gd 0.2 ) 1-x Mn x O 2-δ films

(Ce0.8Gd0.2)(1)-xMnxO2-delta (CGMO) films were deposited on Ni-5at%W (NiW) substrates by chemical solution process. The epitaxial phase and surface morphology of ceria films were evaluated by means of X-ray diffraction and atomic force microscopy. The phase and texture evolution of the CGMO film were investigated with varying the different content of manganese additives. And the morphologies evolution of CGMO films in isothermal crystallization time was also analyzed. Manganese doping might contribute to the improvement of the texture and surface of crystallized films. The full-width at half maximum (FWHM) values of phi scans decreased with the increase of manganese doping. Highly epitaxial oriented films with smooth surface could be acquired with an optimal content of doping. The (Ce0.8Gd0.2)(0.9)Mn0.1O2-delta film might be a significant candidate buffer layer.