Atomic and electronic structure of doped Si(111)(23×23)R30∘-Sn interfacesSeho Yi,Fangfei Ming,Ying-Tzu Huang,Tyler S. Smith,Xiyou Peng,Weisong Tu,Daniel Mulugeta,Renee D. Diehl,Paul C. Snijders,Jun-Hyung Cho,Hanno H. WeiteringPhysical Review B(2018)引用 3|浏览59暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要