Synergetic optimization of electronic and thermal transport for high-performance thermoelectric GeSe–AgSbTe2 alloy

Rhombohedral GeSe is a promising p-type thermoelectric material with a multivalley band structure. However, its figure of merit ZT, especially average ZT is still relatively low compared with the state-of- art thermoelectric materials. Here, we show that alloying with AgSbTe2 can synergistically optimize the electronic and thermal transport properties of GeSe. On one hand, alloying can tune the crystal field and promote the band convergence between the lower light valence band and higher heavy valence band. The rising light valence band maximum increases both the density of state effective mass and carrier mobility, leading to a significantly improved power factor. On the other hand, the phonon scattering is also enhanced by the alloying effect, resulting in a low lattice thermal conductivity of 0.7 W m(-1)K(-1) at 754 K. A peak ZT of approximate to 1.0 at 754 K was achieved in GeSeAg0.2Sb0.2Te0.4 and more importantly, the ZT(avg) (0.65) between 301 K and 754 K was improved by more than 56% compared to GeSeAg0.2Sb0.2Se0.4 (ZT(avg) = 0.41).