Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

Wadia Jouha,Ahmed El Oualkadi,Pascal Dherbecourt,Eric Joubert,Mohamed Masmoudi

IEEE Transactions on Power Electronics（2018）

引用 45|浏览9

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摘要

This letter proposes an accurate parameter extraction method based on the Levenberg-Marquardt algorithm for a silicon carbide (SiC) power mosfet model. An improved compact model uses this method to study the static behavior of SiC power mosfets according to the temperature and the input voltage. The simulation results obtained with this proposed method fit perfectly the measurements and accurately...

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关键词

Semiconductor device modeling,MOSFET,Silicon carbide,Temperature measurement,Temperature,Mathematical model,Parameter extraction

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