Growth temperature optimization of GaAs-based In0.83Ga0.17As on InxAl1−xAs buffers

X.Y. Chen, Y. Gu,Y.G. Zhang,Y.J. Ma, B. Du,J. Zhang, W.Y. Ji,Y.H. Shi,Y. Zhu

Journal of Crystal Growth（2018）

引用 6|浏览46

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摘要

•GSMBE grown In0.83Ga0.17As on GaAs was improved by using two-step buffer.•In0.83Ga0.17As was fully relaxed via the InAlAs buffer at two temperatures.•PL of In0.83Ga0.17As was enhanced by inserting a high temperature template.•Hall mobility of In0.83Ga0.17As can be improved by using two-step buffer.•Threading dislocation density in In0.83Ga0.17As was reduced intensely.

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关键词

A3: Molecular beam epitaxy,B1: InGaAs,B3: Photodetector,A1: Metamorphic buffer

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