Research Progress of Irradiation Damage for GaAs Materials and Devices

GaAs作为重要的III-V族半导体材料，具有直接带隙和高载流子迁移率，且具有良好的抗辐照能力，是制备空间器件的重要候选材料之一。当半导体器件在空间工作时，会受到复杂的空间粒子辐照的影响，导致器件性能下降，可靠性降低，寿命受限，因此，研究GaAs材料的辐照效应损伤具有重要意义。本文综述了不同粒子材料对GaAs材料及器件的辐照损伤效应的研究进展，阐述了不同粒子辐照源对GaAs材料结构及发光特性的影响，对GaAs材料在空间环境中的进一步应用具有实际意义。 As a kind of III-V semiconductor materials, GaAs, with direct band gap and high carrier mobility, has a good anti-radiation ability, and makes an important candidate for the preparation of space devices. However, when the semiconductor devices were working in space, they will be affected by the radiation of the complex space particles, resulting in the degradation of the device performance, the decrease of the reliability and the limitation of the lifetime. Therefore, it is of great significance to analyze the irradiation effect damage of the GaAs material. This paper reviews the research progress on the damage effect of different particle materials on GaAs materials and devices, and expounds the influence of different particle irradiation sources on the structure and luminescent properties of GaAs. This paper has practical significance for the further application of GaAs materials in space environment.