Key Parameters Affecting Stt-Mram Switching Efficiency And Improved Device Performance Of 400 Degrees C-Compatible P-Mtjs

G. Hu, M. G. Gottwald,Q. He,J. H. Park, G. Lauer,J. J. Nowak,S. L. Brown,B. Doris, D. Edelstein, E. R. Evarts,P. Hashemi,B. Khan, Y. H. Kim, C. Kothandaraman, N. Marchack, E. J. O'Sullivan,M. Reuter, R. P. Robertazzi,J. Z. Sun, T. Suwannasiri,P. L. Trouilloud,Y. Zhu,D. C. Worledge

international electron devices meeting（2017）

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摘要

We report the impact of four key parameters on switching efficiency of STT-MRAM devices with perpendicular magnetic anisotropy: device size, device resistance-area product (RA), blanket film Gilbert damping constant (a), and process temperature. Performance degradation observed in 400 degrees C-processed devices was eliminated by optimizing the perpendicular magnetic tunnel junction (p-MTJ) materials. Furthermore, 400 degrees C-compatible double MTJs were developed for the first time and showed 1.5x improvement in switching efficiency compared to single MTJs with identical free layers.

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