On The Wetting States Of Low Melting Point Metal Galinstan (R) On Silicon Microstructured Surfaces

The primary goal of this article is to measure the wetting characteristics of a low melting point metal to determine the efficacy of this type of material for possible use in thermal energy storage applications. Galinstan (R), a commercially available alloy consisting of Gallium, Indium, and Tin is subjected to contact angle measurements on various silicon surfaces at varying temperatures. Due to the oxidation characteristics of Galinstan, all experiments are conducted in an inert nitrogen environment (<0.5ppm oxygen) to maintain fluid-like properties. This work finds that although contact angle changes with substrate and surface structure, temperature has no observable effect on contact angle. Contact angles range from 141 degrees on smooth silicon to greater than 160 degrees on silicon micropillars. Although a temperature dependence is not observed over the range of temperatures studied, having wetting properties of Galinstan on various surfaces is a step toward better understanding the capabilities of this and similar materials in energy management.