Observation of the early stages of GaN thermal decomposition at 1200 °C under N 2

H. Bouazizi,M. Bouzidi,N. Chaaben,Y. El Gmili,J.P. Salvestrini,A. Bchetnia

Materials Science and Engineering: B（2018）

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摘要

In the early stages, the GaN thermal decomposition under N2 is carried out according to lateral and vertical etching processes. They alternately leaded to formation of GaN nano-grains (stages A1 and A2) and local smooth surface (stages A3 and A4).

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关键词

MOVPE,Decomposition,GaN,In situ-reflectance,SEM

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