CMOS terahertz metamaterial based 64 × 64 bolometric detector arrays
international conference on infrared, millimeter, and terahertz waves(2017)
摘要
We present two terahertz detectors composed of microbolometer sensors (vanadium oxide and silicon pn diode) and metamaterial absorbers monolithically integrated into a complementary metal oxide semiconductor (CMOS) process. The metamaterial absorbers were created using the metal-dielectric-metal layers of a commercial CMOS technology resulting in low-cost terahertz detectors. The scalability of this technology was used to form a 64 × 64 pixel terahertz focal plane array.
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关键词
CMOS terahertz metamaterial,bolometric detector arrays,terahertz detectors,microbolometer sensors,pn diode,metamaterial absorbers,complementary metal oxide semiconductor process,metal-dielectric-metal layers,low-cost terahertz detectors,scalability,terahertz focal plane array,VOx,Si
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