High Breakdown Voltage (−201) $eta $ -Ga2O3 Schottky Rectifiers

β-Ga2O3 Schottky barrier diodes were fabricated in a vertical geometry structure consisting of Ni/Au rectifying contacts without edge termination on Si-doped epitaxial layers (10 μm, n~4×1015 cm-3) on Sn-doped bulk Ga2O3 substrates with full-area Ti/Au back Ohmic contacts. The reverse breakdown voltage, VBR, was a function of rectifying contact area, ranging from 1600 Vat 3.1×10-6 cm2 (20-μm diame...